? 2016 ixys corporation, all rights reserved xpt tm 650v igbt genx3 tm w/ diode v ces = 650v i c110 = 120a v ce(sat) ??? ??? ??? ??? ??? ? ? ? ? ? 1.90v t fi(typ) = 107ns symbol test conditions maximum ratings v ces t j = 25c to 175c 650 v v cgr t j = 25c to 175c, r ge = 1m ? 650 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25c (chip capability) 250 a i lrms terminal current limit 200 a i c110 t c = 110c 120 a i f110 t c = 110c 86 a i cm t c = 25c, 1ms 770 a i a t c = 25c 60 a e as t c = 25c 1 j ssoa v ge = 15v, t vj = 150c, r g = 2 ? i cm = 240 a (rbsoa) clamped inductive load v ce ? v ces t sc v ge = 15v, v ce = 400v, t j = 150c 8 s (scsoa) r g = 82 ? , non repetitive p c t c = 25c 830 w t j -55 ... +175 c t jm 175 c t stg -55 ... +175 c tv isol 50/60hz t = 1min 2500 v~ i isol ?? 1ma t = 1s 3000 v~ m d mounting torque 1.5/13 nm/lb.in terminal connection torque 1.3/11.5 nm/lb.in weight 30 g ds100663a(01/16) symbol test conditions characteristic values (t j = 25 ? c, unless otherwise specified) min. typ. max. bv ces i c = 250 ? a, v ge = 0v 650 v v ge(th) i c = 250 ? a, v ce = v ge 3.5 6.0 v i ces v ce = v ces , v ge = 0v 25 ? a t j = 150 ? c 1.5 ma i ges v ce = 0v, v ge = ? 20v ???????????????? 100 na v ce(sat) i c = 100a, v ge = 15v, note 1 1.55 1.90 v t j = 150 ? c 1.77 v features ? international standard package ? minibloc, with aluminium nitride isolation ? 2500 v~ isolation voltage ? optimized for 10-30khz switching ? square rbsoa ? avalanche rated ? short circuit capability ? high current handling capability ? anti-parallel fast diode advantages ? high power density ? low gate drive requirement applications ? power inverters ? ups ? motor drives ? smps ? pfc circuits ? battery chargers ? welding machines ? lamp ballasts extreme light punch through igbt for 10-30khz switching IXYN120N65B3D1 sot-227b, minibloc g = gate, c = collector, e = emitter ? either emitter terminal can be used as main or kelvin emitter g e ? e ? c e153432 e
ixys reserves the right to change limits, test conditions, and dimensions. IXYN120N65B3D1 ixys mosfets and igbts are covered 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 7,005,734 b2 7,157,338b2 by one or more of the following u.s. patents: 4,860,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405 b2 6,759,692 7,063,975 b2 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 6,771,478 b2 7,071,537 symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. g fs i c = 60a, v ce = 10v, note 1 35 58 s c ie s 6900 pf c oes v ce = 25v, v ge = 0v, f = 1mhz 586 pf c res 146 pf q g(on) 250 nc q ge i c = 120a, v ge = 15v, v ce = 0.5 ? v ces 52 nc q gc 110 nc t d(on) 30 ns t ri 28 ns e on 1.34 mj t d(off) 168 ns t fi 107 ns e of f 1.50 mj t d(on) 30 ns t ri 30 ns e on 2.60 mj t d(off) 226 ns t fi 196 ns e off 2.20 mj r thjc 0.18 c/w r thcs 0.05 c/w notes: 1. pulse test, t ? 300 s, duty cycle, d ? 2%. 2. switching times & energy losses may increase for higher v ce (clamp), t j or r g . inductive load, t j = 150c i c = 50a, v ge = 15v v ce = 400v, r g = 2 ? note 2 inductive load, t j = 25c i c = 50a, v ge = 15v v ce = 400v, r g = 2 ? note 2 reverse diode (fred) symbol test conditions characteristic values (t j = 25c unless otherwise specified) min. typ. max. v f i f = 100a, v ge = 0v, note 1 2.70 v t j = 150c 1.7 v i rr t j = 150c 45 a t rr t j = 150c 156 ns r thjc 0.38 c/w i f = 100a, v ge = 0v, -di f /dt = 700a/ s, v r = 400v sot-227b minibloc (ixyn)
? 2016 ixys corporation, all rights reserved IXYN120N65B3D1 fig. 1. output characteristics @ t j = 25oc 0 40 80 120 160 200 240 00.511.522.533.5 v ce - volts i c - amperes v ge = 15v 13v 12v 10v 9v 7v 8v 11v fig. 2. extended output characteristics @ t j = 25oc 0 50 100 150 200 250 300 350 0 2 4 6 8 10 12 14 v ce - volts i c - amperes v ge = 15v 10v 11v 8v 9v 7v 12v fig. 3. output characteristics @ t j = 150oc 0 40 80 120 160 200 240 00.511.522.533.54 v ce - volts i c - amperes v ge = 15v 13v 12v 11v 10v 8v 9v 7v fig. 4. dependence of v ce(sat) on junction temperature 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -50 -25 0 25 50 75 100 125 150 175 t j - degrees centigrade v ce(sat) - normalized v ge = 15v i c = 120a i c = 60a i c = 240a fig. 5. collector-to-emitter voltage vs. gate-to-emitter voltage 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 8 9 10 11 12 13 14 15 v ge - volts v ce - volts i c = 240a t j = 25oc 120a 60a fig. 6. input admittance 0 20 40 60 80 100 120 140 160 180 200 45678910 v ge - volts i c - amperes t j = 150oc 25oc - 40oc
ixys reserves the right to change limits, test conditions, and dimensions. IXYN120N65B3D1 fig. 11. forward-bias safe operating area 0.01 0.1 1 10 100 1000 1 10 100 1000 v ds - volts i d - amperes t j = 175oc t c = 25oc single pulse 25s 1ms v ce(sat) limi t 100s 10ms 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 pulse width - seconds z (th)jc - k / w fig. 12. maximum trasient thermal impedance (igbt) aaa 0.3 fig. 7. transconductance 0 20 40 60 80 100 120 0 20 40 60 80 100 120 140 160 180 200 220 i c - amperes g f s - siemens t j = - 40oc 25oc 150oc fig. 10. reverse-bias safe operating area 0 40 80 120 160 200 240 280 100 200 300 400 500 600 700 v ce - volts i c - amperes t j = 150oc r g = 2 ? dv / dt < 10v / ns fig. 8. gate charge 0 2 4 6 8 10 12 14 16 0 50 100 150 200 250 q g - nanocoulombs v ge - volts v ce = 325v i c = 120a i g = 10ma fig. 9. capacitance 100 1,000 10,000 0 5 10 15 20 25 30 35 40 v ce - volts capacitance - picofarad s f = 1 mh z c ies c oes c res
? 2016 ixys corporation, all rights reserved IXYN120N65B3D1 fig. 13. inductive switching energy loss vs. gate resistance 1 2 3 4 5 6 2 4 6 8 10 12 14 r g - ohms e off - millijoules 0 2 4 6 8 10 e on - millijoules e off e on - - - - t j = 150oc , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 16. inductive turn-off switching times vs. gate resistance 130 150 170 190 210 230 2 4 6 8 10 12 14 r g - ohms t f i - nanoseconds 100 200 300 400 500 600 t d(off) - nanoseconds t f i t d(off) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 14. inductive switching energy loss vs. collector current 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 50 55 60 65 70 75 80 85 90 95 100 i c - amperes e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 150oc t j = 25oc fig. 15. inductive switching energy loss vs. junction temperature 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 25 50 75 100 125 150 t j - degrees centigrade e off - millijoules 0 1 2 3 4 5 6 7 8 e on - millijoules e off e on - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 50a i c = 100a fig. 17. inductive turn-off switching times vs. collector current 60 80 100 120 140 160 180 200 220 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t f i - nanosecond s 120 140 160 180 200 220 240 260 280 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 18. inductive turn-off switching times vs. junction temperature 90 110 130 150 170 190 210 25 50 75 100 125 150 t j - degrees centigrade t f i - nanosecond s 120 140 160 180 200 220 240 t d(off) - nanoseconds t f i t d(off) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a
ixys reserves the right to change limits, test conditions, and dimensions. IXYN120N65B3D1 fig. 20. inductive turn-on switching times vs. collector current 20 30 40 50 60 70 80 90 100 50 55 60 65 70 75 80 85 90 95 100 i c - amperes t r i - nanosecond s 28 29 30 31 32 33 34 35 36 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v t j = 25oc t j = 150oc fig. 21. inductive turn-on switching times vs. junction temperature 0 20 40 60 80 100 120 140 25 50 75 100 125 150 t j - degrees centigrade t r i - nanosecond s 26 28 30 32 34 36 38 40 t d(on) - nanoseconds t r i t d(on) - - - - r g = 2 ? , v ge = 15v v ce = 400v i c = 100a i c = 50a fig. 19. inductive turn-on switching times vs. gate resistance 0 20 40 60 80 100 120 140 160 180 2468101214 r g - ohms t r i - nanosecond s 10 20 30 40 50 60 70 80 90 100 t d(on) - nanoseconds t r i t d(on) - - - - t j = 150oc, v ge = 15v v ce = 400v i c = 50a i c = 100a
? 2016 ixys corporation, all rights reserved ixys ref: ixy_120n65b3(8d-y42) 5-06-15 IXYN120N65B3D1 fig. 22. diode forward characteristics 0 20 40 60 80 100 120 140 160 180 200 00.511.522.5 v f (v) i f (a) t j = 150oc t j = 25oc fig. 23. reverse recovery charge vs. -di f /dt 1.8 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 3.8 200 300 400 500 600 700 800 900 1000 -di f / dt (a/s) q rr (c) 50a 75a i f = 100a t j = 150oc v r = 400v fig. 24. reverse recovery current vs. -di f /dt 15 20 25 30 35 40 45 50 200 300 400 500 600 700 800 900 1000 di f /dt (a/s) i rr (a) i f = 100a 50a 75a t j = 150oc v r = 400v fig. 25. reverse recovery time vs. -di f /dt 130 140 150 160 170 180 190 200 210 200 300 400 500 600 700 800 900 1000 -di f /dt (a/s) t rr (ns) i f = 100a 75a 50a t j = 150oc v r = 400v fig. 27. maximum transient thermal impedance (diode) 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 pulse width (s) z (th)jc k / w fig. 26. dynamic parameters q rr, i rr vs. junction temperature 0.0 0.2 0.4 0.6 0.8 1.0 1.2 0 20 40 60 80 100 120 140 160 t j (oc) k f k f i rr k f q rr v r = 400v i f = 100a -dif/dt = 700a/s
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